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參數(shù)資料
| 型號： | HUF76132S3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| 中文描述： | 75 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 110K |
| 代理商： | HUF76132S3S |
6-139
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SPICE Thermal Model
REV May 1998
HUF76132
CTHERM1 th 6 5.00e-3
CTHERM2 6 5 1.18e-2
CTHERM3 5 4 15.5e-2
CTHERM4 4 3 1.85e-2
CTHERM5 3 2 2.00e-2
CTHERM6 2 tl 2.5e-2
RTHERM1 th 6 1.51e-2
RTHERM2 6 5 1.51e-2
RTHERM3 5 4 3.03e-2
RTHERM4 4 3 6.05e-2
RTHERM5 3 2 1.81e-1
RTHERM6 2 tl 2.45e-1
SABER Thermal Model
SABER thermal model HUF76132
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.50e-3
ctherm.ctherm2 6 5 = 1.18e-2
ctherm.ctherm3 5 4 = 1.55e-2
ctherm.ctherm4 4 3 = 1.85e-2
ctherm.ctherm5 3 2 = 2.00e-2
ctherm.ctherm6 2 tl = 2.50e-2
rtherm.rtherm1 th 6 = 1.51e-2
rtherm.rtherm2 6 5 = 1.51e-2
rtherm.rtherm3 5 4 = 3.03e-2
rtherm.rtherm4 4 3 = 6.05e-2
rtherm.rtherm5 3 2 = 1.81e-1
rtherm.rtherm6 2 tl = 2.45e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76132P3, HUF76132S3S
相關PDF資料 |
PDF描述 |
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| HUF76132SK8 | 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11.5A, 30V, 0.0115 Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76139P3 | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76139S3S | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76407D3 | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76407D3S | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76132S3ST | 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76132SK8 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76132SK8T | 功能描述:MOSFET USE 512-FDS6690A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76137P3 | 功能描述:MOSFET 75a 30V 0.009 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76137S3 | 制造商:Harris Corporation 功能描述: |
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