參數(shù)資料
型號： HUF76132P3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
中文描述： 75 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 5/10頁
文件大?。?/td> 110K
代理商： HUF76132P3
6-134
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
3
4
5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
20
60
100
I
D
150
o
C
-40
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
120
80
25
o
C
40
V
GS
= 4.5V
V
GS
= 4V
0
1
2
3
4
0
20
40
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
V
GS
= 10V
V
GS
= 3V
120
I
D
,
V
GS
= 3.5V
100
60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
10
12
14
18
6
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 75A
I
D
= 25A
r
D
,
O
)
8
16
I
D
= 51A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.4
-60
0
60
120
180
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
1.2
1.6
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
-60
0
60
120
180
0.6
0.8
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.2
1.1
1.0
0.9
-60
0
60
120
180
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76132P3, HUF76132S3S
相關(guān)PDF資料
PDF描述
HUF76132S3S 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
HUF76132SK8 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11.5A, 30V, 0.0115 Ω N溝道邏輯電平功率MOS場效應(yīng)管)
HUF76139P3 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
HUF76139S3S 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
HUF76407D3 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76132S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76132S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132S3ST 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132SK8 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132SK8T 功能描述:MOSFET USE 512-FDS6690A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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