參數(shù)資料
型號(hào): HUF76132P3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述: 75 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 6/11頁
文件大?。?/td> 287K
代理商: HUF76132P3
2003 Fairchild Semiconductor Corporation
HUF76132P3, HUF76132S3S Rev. C1
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
C
OSS
2500
1500
0
0
5
15
25
C
2000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
30
500
C
ISS
C
RSS
10
20
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
10
8
6
4
0
V
G
,
V
DD
= 15V
2
30
50
0
Q
g
, GATE CHARGE (nC)
10
I
D
= 75A
I
D
= 51A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
20
40
100
20
30
40
50
0
400
300
200
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 41A, R
L
= 0.312
t
d(OFF)
t
d(ON)
t
r
t
f
20
30
40
50
0
400
200
100
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 75A, R
L
= 0.20
300
t
r
t
f
t
d(OFF)
t
d(ON)
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF76132P3, HUF76132S3S
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HUF76132S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
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HUF76132S3ST 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132SK8 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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