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參數資料
| 型號： | HUF76129P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 56 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HUF76129P3 |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 19999
HUF76129P3, HUF76129S3S
56A, 30V 0.016 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76129.
Features
Logic Level Gate Drive
56A, 30V
Ultra Low On-Resistance r
DS(ON)
= 0.016
Temperature Compensating PSPICE
Model
Temperature Compensating SABER
Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76129P3
TO-220AB
76129P
HUF76129S3S
TO-263AB
76129S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76129S3ST.
D
G
S
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
GATE
SOURCE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
September 1999
File Number
4395.6
相關PDF資料 |
PDF描述 |
|---|---|
| HUF76129S3S | 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76131SK8 | 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76131SK8T | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| HUF76131SK8 | 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76143S3S | XTAL MTL SMT HC49/USM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF76129S3 | 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129S3ST | 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129S3STK | 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76131SK8 | 功能描述:MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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