參數(shù)資料
型號： HUF76129D3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(20A, 30V, 0.016 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管)
中文描述： 20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 5/10頁
文件大?。?/td> 107K
代理商： HUF76129D3
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
2
3
1
0
15
30
45
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
60
4
I
D
,
V
GS
= 4V
V
GS
= 3.5V
0
15
30
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
45
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
60
I
D
,
V
GS
= 3V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
18
21
24
30
12
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 20A
I
D
= 10A
I
D
= 5A
r
D
,
O
)
15
27
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.6
-80
0
40
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
160
1.4
-40
80
120
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 20A
0.6
0.7
1.0
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
0.8
1.1
-80
0
40
160
-40
80
120
1.15
1.05
1.00
0.95
0.90
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
1.10
-80
0
40
160
-40
80
120
HUF76129D3, HUF76129D3S
相關PDF資料
PDF描述
HUF76129D3S 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(20A, 30V, 0.016 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管)
HUF76132P3 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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相關代理商/技術參數(shù)
參數(shù)描述
HUF76129D3S 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.016Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129D3ST 功能描述:MOSFET USE 512-FDD8878 Logic Level 0.016Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129P3 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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