參數(shù)資料
型號(hào)： HUF76121D3
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述： 20 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝： TO-251AA, 3 PIN
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 124K
代理商： HUF76121D3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF76121SK8
8A, 30V 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76121.
Features
Logic Level Gate Drive
8A, 30V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.Intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Related Literature
- TB370, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76121SK8
MS-012AA
76121SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76121SK8T.
SOURCE(2)
DRAIN(8)
NC (1)
DRAIN(7)
DRAIN(6)
DRAIN(5)
SOURCE(3)
GATE(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
April 1999
File Number
4737
相關(guān)PDF資料
PDF描述
HUF76121D3S 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121P3 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121S3S 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121S3ST 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76129S3S 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76121D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3ST 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121P3 功能描述:MOSFET 47a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76121S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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