參數(shù)資料
型號： HUF76113T3ST
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
中文描述： 4.7 A, 30 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 5/12頁
文件大?。?/td> 175K
代理商： HUF76113T3ST
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
5
10
15
20
25
30
0
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
150
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
5
10
15
20
25
30
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
V
GS
= 3.5V
V
GS
= 3V
30
40
50
60
70
80
4
6
8
10
2
20
I
D
= 0.5A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 4.7A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
r
D
,
O
)
0.6
1.0
1.2
1.8
-80
-40
0
40
80
120
160
0.8
1.4
1.6
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 4.7A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
0.7
0.9
1.1
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76113T3ST
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