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參數(shù)資料
| 型號(hào)： | HUF76113SK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SO |
| 中文描述： | 6.5 A, 30 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 384K |
| 代理商： | HUF76113SK8T |
4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
10
0.01
1
10
-2
Z
θ
J
,
T
0.001
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
10
2
10
3
R
θ
JA
= 50
o
C/W
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
150 - T
A
125
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
D
,
500
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
3
t, PULSE WIDTH (s)
10
V
GS
= 5V
R
θ
JA
= 50
o
C/W
100
10
2
10
1
T
J
= MAX RATED
T
A
= 25
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
500
10
I
D
,
10
1
10
100
100
1
0.01
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
10
HUF76113SK8
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| HUF76121D3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76121D3ST | 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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