參數(shù)資料
型號(hào)： HUF76113DK8
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 6 A, 30 V, 0.041 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 9/11頁
文件大?。?/td> 384K
代理商： HUF76113DK8
9
PSPICE Electrical Model
SUBCKT HUF76113SK8 2 1 3 ;
REV 4 June 1998
CA 12 8 9.60-10
CB 15 14 9.95e-10
CIN 6 8 5.01e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 32.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.00e-9
LGATE 1 9 1.00e-9
LSOURCE 3 7 2.27e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.01e-3
RGATE 9 20 2.94
RLDRAIN 2 5 10
RLGATE 1 9 10
RLSOURCE 3 7 2.27
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 17.50e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),2.5))}
.MODEL DBODYMOD D (IS = 9.35e-13 RS = 1.39e-2 TRS1 = 1.12e-6 TRS2 = 1.05e-6 CJO = 9.85e-10 TT = 2.82e-8 M = 0.42 )
.MODEL DBREAKMOD D (RS = 1.91e-1 TRS1 = 3.51e-3 TRS2 = 1.21e-6 )
.MODEL DPLCAPMOD D (CJO = 5.51e-10 IS = 1e-30 N = 10 M = 0.60 )
.MODEL MMEDMOD NMOS (VTO = 1.76 KP = 3.55 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.94)
.MODEL MSTROMOD NMOS (VTO = 2.08 KP = 37 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.48 KP = 0.095 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 29.4 RS=0.1)
.MODEL RBREAKMOD RES (TC1 = 1.02e-3 TC2 = 1.10e-7)
.MODEL RDRAINMOD RES (TC1 = 4.05e-2 TC2 = 1.12e-4)
.MODEL RSLCMOD RES (TC1 = 9.92e-3 TC2 = -2.06e-5)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -1.87e-3 TC2 = -5.42e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.12e-3 TC2 = 1.12e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.00 VOFF= -1.55)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.55 VOFF= -7.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 1.05)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.05 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76113SK8
相關(guān)PDF資料
PDF描述
HUF76113T3ST 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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HUF76129D3S 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(20A, 30V, 0.016 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管)
HUF76132P3 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76113DK8T 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8T 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113T3ST 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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