參數(shù)資料
型號(hào)： HUF76013P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
中文描述： 20 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 195K
代理商： HUF76013P3
2001 Fairchild Semiconductor Corporation
HUF76013P3, HUF76013D3S Rev. B
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.8
0.9
1.0
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
1.1
100
1000
0.1
1
10
20
2500
50
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
3
6
9
15
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 10V
I
D
= 20A
I
D
= 10A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
12
0
30
60
90
120
150
180
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 5V, V
DD
= 10V, I
D
= 20A
t
r
t
f
t
d(ON)
t
d(OFF)
0
20
40
60
80
100
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 10V, I
D
= 20A
t
r
t
d(ON)
t
f
t
d(OFF)
120
HUF76013P3, HUF76013D3S
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HUF76105SK8T 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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