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參數(shù)資料
| 型號(hào)： | HUF76013P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 20 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 10/11頁(yè) |
| 文件大?。?/td> | 245K |
| 代理商： | HUF76013P3 |
10
HUF76013P3, HUF76013D3S
TO-252AA
SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE
TO-252AA
16mm TAPE AND REEL
b
2
E
D
L
3
L
e
b
1
b
1
3
A
L
c
SEATING
PLANE
BACK VIEW
2
H
1
A
1
b
3
e
1
J
1
L
1
TERM. 4
0.265
(6.7)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
0.265 (6.7)
0.070 (1.8)
0.118 (3.0)
0.063 (1.6) TYP
0.090 (2.3) TYP
SYMBOL
A
A
1
b
b
1
b
2
b
3
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-252AA outline dated 9-88.
2. L
3
and b
3
dimensions establish a minimum mounting surface for
terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Positionofleadtobemeasured0.090inches(2.28mm)frombottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 11 dated 1-00.
INCHES
MIN
0.086
0.018
0.028
0.033
0.205
0.190
0.018
0.270
0.250
0.090 TYP
0.180 BSC
0.035
0.040
0.100
0.020
0.025
0.170
MILLIMETERS
MIN
2.19
0.46
0.72
0.84
5.21
4.83
0.46
6.86
6.35
2.28 TYP
4.57 BSC
0.89
1.02
2.54
0.51
0.64
4.32
NOTES
-
4, 5
4, 5
4
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.094
0.022
0.032
0.045
0.215
-
0.022
0.295
0.265
MAX
2.38
0.55
0.81
1.14
5.46
-
0.55
7.49
6.73
0.045
0.045
0.115
-
0.040
-
1.14
1.14
2.92
-
1.01
-
2.0mm
4.0mm
1.5mm
DIA. HOLE
8.0mm
16mm
USER DIRECTION OF FEED
C
1.75mm
330mm
50mm
13mm
22.4mm
16.4mm
COVER TAPE
GENERAL INFORMATION
1. 2500 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76013D3S | 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs |
| HUF76013D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA |
| HUF76013P3 | 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs |
| HUF76113SK8 | 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76113SK8T | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76105DK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105DK8T | 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76105SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105SK8T | 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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