參數(shù)資料
型號(hào)： HUF76009D3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
中文描述： 20 A, 20 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁(yè)數(shù)： 7/12頁(yè)
文件大小： 252K
代理商： HUF76009D3S
2001 Fairchild Semiconductor Corporation
HUF76009P3, HUF76009D3S Rev. B
PSPICE Electrical Model
.SUBCKT HUF76009P3 2 1 3 ;
rev 16 March 2000
CA 12 8 5.6e-10
CB 15 14 5.0e-10
CIN 6 8 4.5e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 25.9
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 4.6e-9
LSOURCE 3 7 4.7e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.0e-3
RGATE 9 20 4.0
RLDRAIN 2 5 10
RLGATE 1 9 46
RLSOURCE 3 7 47
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.4e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*70),3))}
.MODEL DBODYMOD D (IS = 3.4e-13 RS = 1.0e-2 TRS1 = 2e-3 TRS2 = 8e-7 CJO = 1.05e-9 TT = 1.18e-8 XTI = 5 M = 0.42)
.MODEL DBREAKMOD D (RS = 1.3e- 1TRS1 = 0TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 3.2e-1 0IS = 1e-3 0N = 10 M = 0.6)
.MODEL MMEDMOD NMOS (VTO = 2.38 KP = 12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RS = 0.03 RG = 4)
.MODEL MSTROMOD NMOS (VTO = 2.87 KP = 28 LAMBDA = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.95 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 40 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.7e- 4TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 9.8e-3 TC2 = 2.85e-5)
.MODEL RSLCMOD RES (TC1 = 5e-3 TC2 = 5.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.48e-3 TC2 = -5e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.68e- 3TC2 = 8e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.7 VOFF= -2.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= -4.7)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.3)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.3 VOFF= -1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76009P3, HUF76009D3S
相關(guān)PDF資料
PDF描述
HUF76009D3S 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009D3ST TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA
HUF76009P3 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009P3 RF/Coaxial Connector; RF Coax Type:TNC; Impedance:50ohm; Body Style:Straight Flanged Jack; Body Plating:Nickel RoHS Compliant: Yes
HUF76013D3S 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76009D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.027Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76009P3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76013D3S 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013P3 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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