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參數(shù)資料
| 型號(hào)： | HUF75945S3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs |
| 中文描述： | 38 A, 200 V, 0.071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 209K |
| 代理商： | HUF75945S3ST |
2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
1
10
100
500
500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
μ
s
10ms
1ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
1
0.001
10
100
0.01
0.1
1
200
10
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
25
50
75
2
3
4
5
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
25
50
75
0
1
2
3
4
5
6
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 5V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 38A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
HUF75945G3, HUF75945P3, HUF75945S3ST
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