參數(shù)資料
型號： HUF75945P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs
中文描述： 38 A, 200 V, 0.071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/10頁
文件大?。?/td> 209K
代理商： HUF75945P3
2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
200
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 190V, V
GS
= 0V
V
DS
= 180V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 38A, V
GS
= 10V (Figure 9)
-
0.056
0.071
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-247, TO-220, TO-263
-
-
0.48
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
TO-247
-
-
30
o
C/W
TO-220, TO-263
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 100V, I
D
= 38A
V
GS
=
10V,
R
GS
= 3.0
(Figures 18, 19)
-
-
33
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
64
-
ns
Turn-Off Delay Time
t
d(OFF)
-
65
-
ns
Fall Time
t
f
-
80
-
ns
Turn-Off Time
t
OFF
-
-
217
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 100V,
I
D
= 38A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
215
280
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
118
153
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
8
10
nC
Gate to Source Gate Charge
Q
gs
-
15
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
42
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 12)
-
4023
-
pF
Output Capacitance
C
OSS
-
880
-
pF
Reverse Transfer Capacitance
C
RSS
-
240
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 38A
-
-
1.25
V
I
SD
= 19A
-
-
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 38A, dI
SD
/dt = 100A/
μ
s
-
-
281
ns
Reverse Recovered Charge
Q
RR
I
SD
= 38A, dI
SD
/dt = 100A/
μ
s
-
-
2700
nC
HUF75945G3, HUF75945P3, HUF75945S3ST
相關(guān)PDF資料
PDF描述
HUF75945S3ST 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs
HUF76009D3S 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009D3S 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009D3ST TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA
HUF76009P3 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75945S3ST 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76009D3S 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.027Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76009P3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76013D3S 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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