參數(shù)資料
型號(hào)： HUF75823D3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 14 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 211K
代理商： HUF75823D3S
2001 Fairchild Semiconductor Corporation
HUF75823D3, HUF75823D3S Rev. B
Electrical Specifications
T
C
= 25
o
C,
Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
DS
= 140V, V
GS
= 0V
V
DS
= 135V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
20V
150
-
-
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
I
D
= 14A, V
GS
= 10V (Figure 9)
2
-
4
V
Drain to Source On Resistance
-
0.125
0.150
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-251 and TO-252
-
-
1.76
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
100
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 75V, I
D
= 14A
V
GS
=
10V,
R
GS
= 12
(Figures 18, 19)
-
-
48
ns
Turn-On Delay Time
-
7.7
-
ns
Rise Time
-
24
-
ns
Turn-Off Delay Time
-
45
-
ns
Fall Time
-
26
-
ns
Turn-Off Time
-
-
105
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V,
I
D
= 14A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
43
54
nC
Gate Charge at 10V
-
23
29
nC
Threshold Gate Charge
-
1.5
1.9
nC
Gate to Source Gate Charge
-
3.4
-
nC
Gate to Drain "Miller" Charge
-
8.8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
800
-
pF
Output Capacitance
-
180
-
pF
Reverse Transfer Capacitance
-
65
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 14A
I
SD
= 7A
I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
150
ns
Reverse Recovered Charge
Q
RR
-
-
750
nC
HUF75823D3, HUF75823D3S
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HUF75829D3S 功能描述:MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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