參數(shù)資料
型號(hào)： HUF75652G3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
中文描述： 75 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 195K
代理商： HUF75652G3
2001 Fairchild Semiconductor Corporation
HUF75652G3 Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
100
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 95V, V
GS
= 0V
-
-
1
μ
A
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figures 9)
-
0.0067
0.008
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-247
-
-
0.29
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
-
-
30
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 50V, I
D
= 75A, V
GS
=
10V, R
GS
= 2.0
-
-
320
ns
Turn-On Delay Time
t
d(ON)
-
18.5
-
ns
Rise Time
t
r
-
195
-
ns
Turn-Off Delay Time
t
d(OFF)
-
80
-
ns
Fall Time
t
f
-
190
-
ns
Turn-Off Time
t
OFF
-
-
410
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 50V,
I
D
= 75A,
I
g(REF)
= 1.0mA
(Figure 13)
-
393
475
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
211
255
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
14
16.5
nC
Gate to Source Gate Charge
Q
gs
-
26
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
74
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
7585
-
pF
Output Capacitance
C
OSS
-
2345
-
pF
Reverse Transfer Capacitance
C
RSS
-
630
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.25
V
I
SD
= 35A
-
-
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
150
ns
Reverse Recovered Charge
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
490
nC
HUF75652G3
相關(guān)PDF資料
PDF描述
HUF75652G3 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75652G3_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75652G3_Q 功能描述:MOSFET 75a 100VN-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75823D3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75823D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75823D3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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