參數(shù)資料
型號(hào)： HUF75337P3
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
中文描述： 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 4/9頁(yè)
文件大?。?/td> 106K
代理商： HUF75337P3
115
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
50
100
1000
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
1000
10
100
1
1
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
0.01
0.1
1
10
0.001
10
700
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
30
60
90
0
3.0
4.5
6.0
7.5
120
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
150
1.5
V
GS
= 10V
V
GS
= 20V
V
GS
= 7V
30
60
90
120
150
1.5
3.0
4.5
6.0
7.5
0
0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
HUF75337G3, HUF75337P3, HUF75337S3S
相關(guān)PDF資料
PDF描述
HUF75337S3S 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管)
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HUF75829D3S 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75337P3_Q 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75337S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75337S3S 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75337S3ST 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75339G3 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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