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參數(shù)資料
| 型號(hào)： | HUF75337G3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 106K |
| 代理商： | HUF75337G3 |
120
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SPICE Thermal Model
REV February 1999
HUF75337
CTHERM1 th 6 8.0e-7
CTHERM2 6 5 1.6e-6
CTHERM3 5 4 4.8e-3
CTHERM4 4 3 7.6e-3
CTHERM5 3 2 2.4e-2
CTHERM6 2 tl 1.5
RTHERM1 th 6 1.3e-4
RTHERM2 6 5 1.8e-3
RTHERM3 5 4 3.7e-2
RTHERM4 4 3 2.3e-1
RTHERM5 3 2 3.4e-1
RTHERM6 2 tl 6.4e-2
SABER Thermal Model
SABER thermal model HUF75337
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8.0e-7
ctherm.ctherm2 6 5 = 1.6e-6
ctherm.ctherm3 5 4 = 4.8e-3
ctherm.ctherm4 4 3 = 7.6e-3
ctherm.ctherm5 3 2 = 2.4e-2
ctherm.ctherm6 2 tl = 1.5
rtherm.rtherm1 th 6 = 1.3e-4
rtherm.rtherm2 6 5 = 1.8e-3
rtherm.rtherm3 5 4 = 3.7e-2
rtherm.rtherm4 4 3 = 2.3e-1
rtherm.rtherm5 3 2 = 3.4e-1
rtherm.rtherm6 2 tl = 6.4e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF75337G3, HUF75337P3, HUF75337S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75337P3 | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF75337S3S | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF75829D3 | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF75829D3S | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76105DK8 | 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75337P3 | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337P3_Q | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75337S3S | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75337S3ST | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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