參數(shù)資料
型號： HUF75321D3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N溝道UltraFET功率MOS場效應(yīng)管)
中文描述： 20 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/9頁
文件大?。?/td> 129K
代理商： HUF75321D3S
59
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
55
55
±
20
20
Figure 4
A
Figures 6, 14, 15
93
0.625
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 50V, V
GS
= 0V
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 20A, V
GS
= 10V (Figure 9)
-
0.030
0.036
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
1.6
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-251, TO-252
-
-
100
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 30V, I
D
20A,
R
L
= 1.5
, V
GS
=
10V,
R
GS
= 25
-
-
100
ns
Turn-On Delay Time
t
d(ON)
-
11
-
ns
Rise Time
t
r
-
55
-
ns
Turn-Off Delay Time
t
d(OFF)
-
47
-
ns
Fall Time
t
f
-
66
-
ns
Turn-Off Time
t
OFF
-
-
170
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 30V,
I
D
20A,
R
L
= 1.5
I
g(REF)
= 1.0mA
(Figure 13)
-
36
44
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
21
26
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
1.3
1.6
nC
Gate to Source Gate Charge
Q
gs
-
3
-
nC
Reverse Transfer Capacitance
Q
gd
-
9
-
nC
HUF75321D3, HUF75321D3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75321D3ST 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75321D3ST_S2457 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75321P3 功能描述:MOSFET 35A 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75321S3 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75321S3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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