參數(shù)資料
型號(hào)： HTL294MI
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 34K
代理商： HTL294MI
HI-SINCERITY
MICROELECTRONICS CORP.
HTL294MD
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : Preliminary Data
Issued Date : 2001.03.01
Revised Date : 2001.03.29
Page No. : 1/3
HTL294MD
HSMC Product Specification
Description
The HTL294MD is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................... 1.5 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage.................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current...................................................................................................... -400 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-400
-400
-6
-
-
-
-
-
-
-
50
60
50
30
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-10
-0.2
-200
-300
-1.2
-750
-
250
-
-
30
Unit
V
V
V
uA
uA
uA
mV
mV
V
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=10uA
VCB=-400V, IE=0
VCE=-400V, IE=0
VEB=-6V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-80mA, IB=-4mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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