參數(shù)資料
型號(hào)： HTIP47
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 32K
代理商： HTIP47
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP47
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6726-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
HSMC Product Specification
Description
The HTIP47 is designed for high voltage switch switching
applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................. -50 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 40 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 350 V
BVCEO Collector to Emitter Voltage................................................................................. 250 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
IEBO
ICEO
ICES
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
350
250
5
-
-
-
-
-
30
10
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
1
1
1
1.5
150
-
-
Unit
V
V
V
mA
mA
mA
V
V
Test Conditions
IC=1mA
IC=30mA
IE=0.1mA
VEB=5V
VCE=150V
VCE=350V
IC=1A, IB=0.2A
IC=1A, VCE=10V
IC=0.3A, VCE=10V
IC=1A, VCE=10V
IC=0.2A, VCE=10V, f=2MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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