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參數(shù)資料
| 型號(hào)： | HTIF127 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 35K |
| 代理商： | HTIF127 |
HI-SINCERITY
MICROELECTRONICS CORP.
HTIF127
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9216-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
HSMC Product Specification
Description
The HTIF127 is designed for use in general purpose amplifier and
low-speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 45 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current (Pulse)................................................................................................. -8 A
IC Collector Current (Continuous)........................................................................................ -5 A
IB Base Current............................................................................................................ -120 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
*BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Min.
-100
-100
-
-
-
-
-
-
1
1
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-200
-500
-2
-2
-4
-2.5
-
-
Unit
V
V
uA
uA
mA
V
V
V
K
K
Test Conditions
IC=-1mA
IC=-100mA
VCB=-100V
VCE=-50V
VEB=-5V
IC=-3A, IB=-12mA
IC=-5A, IB=-20mA
IC=-3A, VCE=-3V
IC=-0.5A, VCE=-3V
IC=-3A, VCE=-3V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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