參數(shù)資料
型號: HT9032A(16DIP)
英文描述: Telecommunication IC
中文描述: 通信集成電路
文件頁數(shù): 2/16頁
文件大?。?/td> 111K
代理商: HT9032A(16DIP)
1999 May 17
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
FEATURES
Specially designed for use at 5 V supply voltage
Short channel transistor with high transfer admittance to
input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
This product is supplied in anti-static packing to
prevent damage caused by electrostatic discharge
during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A
and SNW-FQ-302B.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1 Simplified outline (SOT143B) and symbol.
BF904 marking code:
M04.
handbook, halfpage
4
3
2
1
Top view
MAM124
s,b
d
g1
g2
Fig.2 Simplified outline (SOT143R) and symbol.
BF904R marking code:
M06.
handbook, halfpage
Top view
MAM125 - 1
s,b
d
g1
g2
3
4
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
T
j
y
fs
C
ig1-s
C
rs
F
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
22
25
2.2
25
2
7
30
200
150
30
2.6
35
V
mA
mW
°
C
mS
pF
fF
dB
f = 1 MHz
f = 800 MHz
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