參數(shù)資料
型號: HT2ICS2002W
廠商: NXP Semiconductors N.V.
元件分類: 通信及網(wǎng)絡(luò)
英文描述: HITAG 2 transponder IC
封裝: HT2DC20S20/F<SOT385-1 (PLLMC)|<<http://www.nxp.com/packages/SOT385-1.html<1<Always Pb-free,;HT2ICS2002W/V6F<Uncased die|<<<1<Always Pb-free,;HT2ICS2002W/V6F<Uncased
文件頁數(shù): 5/9頁
文件大小: 79K
代理商: HT2ICS2002W
HT2X_SDS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.0 — 16 September 2011
210430
5 of 9
NXP Semiconductors
HT2x
HITAG 2 transponder IC
Table 5.
Page
0
1
2
3
8.
Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
9. Abbreviations
Table 8.
Acronym
EEPROM
IC
RF
RWD
Memory map in Password Mode
Content
serial number
password RWD
reserved for future use
configuration (8 bit)
password tag (24 bit)
usable memory page
usable memory page
usable memory page
usable memory page
Access
ro
r/w or 0
r/w or 0
r/w or ro
4
5
6
7
r/w or ro
r/w or ro
r/w or ro
r/w or ro
Table 6.
Symbol
V
DD
V
ESD
Limiting values - HT2ICS2002W/V6F
[1]
Parameter
supply voltage
electrostatic discharge voltage
Conditions
Min
0.5
2
Max
+6.5
-
Unit
V
kV
MIL-STD 883D, Method
3015.7, Human Body
MIL-STD 883D, Method 3023
IN1-IN2
I
lu
I
i(max)
T
j
latch-up current
maximum input current
100
-
55
-
30
mA
mA
C
junction temperature
+140
Table 7.
Symbol
T
stg
Limiting values - HT2DC20S20/F (SOT385-1)/ HT2MOA2S20/E/3 (SOT500-2)
[1]
Parameter
Conditions
storage temperature
Min
55
Max
+125
Unit
C
Abbreviations
Description
Electrically Erasable Programmable Read-Only Memory
Integrated Circuit
Radio Frequency
Read Write Device
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