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參數(shù)資料
| 型號： | HSU229 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for Band Switch(用于波段開關(guān)的平面外延二極管) |
| 中文描述： | 硅外延平面二極管波段開關(guān)（用于波段開關(guān)的平面外延二極管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | HSU229 |
HSU229
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
Pd
35
V
Power dissipation
150
mW
Junction temperature
Tj
125
°
C
°
C
Storage temperature
Tstg
–55 to+125
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
V
R
I
R
V
F
C
35
—
—
V
I
R
= 1
μ
A
V
R
= 30 V
I
F
= 100mA
V
R
= 15V, f = 1 MHz
I
F
= 2 mA , f = 100 MHz
Reverse current
—
—
50
nA
Forward voltage
—
—
1.1
V
Capacitance
—
—
1.5
pF
Forward resistance
r f
—
—
0.6
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