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參數(shù)資料
| 型號(hào)： | HSM198S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode forVarious Detector,High speed switching(用于多種檢波和高速開關(guān)的肖特基勢(shì)壘二極管) |
| 中文描述： | 硅肖特基二極管forVarious探測(cè)器，高速開關(guān)（用于多種檢波和高速開關(guān)的肖特基勢(shì)壘二極管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 23K |
| 代理商： | HSM198S |
HSM198S
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
O
*
Tj
10
V
Average forward current
30
mA
Junction temperature
125
°C
Storage temperature
Note: Two device total
Tstg
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
*
1
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
I
F
C
—
—
1.1
V
I
F
= 5mA
V
R
= 6V
V
F
= 1V
V
R
= 1V, f = 1MHz
I
F
= 5mA
Vin = 2Vrms, f = 40MHz,
R
L
= 5k
, C
L
= 20pF
*
reverse direction 1 pulse
Reverse current
—
—
70
μA
Forward current
4.5
—
—
mA
Capacitance
—
—
1.5
pF
Capacitance deviation
V
F
η
—
—
10
mV
Rectifier efficiency
70
—
—
%
ESD Capability
—
30
—
—
V
2
C = 200pF, Both forward and
Notes: 1. Per one device
2. Failure Criterrion; I
R
≥
140 μA at V
R
= 6V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSM198S-TR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:HSM198STR-E |
| HSM198STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:HSM198STR-E |
| HSM2.5-6.4-15-1 | 制造商:Richco 功能描述:STANDOFF THRD FEM/FEM WHT 15MM |
| HSM2.5-6.4-15-2 | 制造商:ESSENTRA COMPONENTS 功能描述:HEX STANDOFF M2.5 NYLON 15MM |
| HSM2.5-6.4-15-3 | 制造商:ESSENTRA COMPONENTS 功能描述:HEX STANDOFF M2.5 NYLON 15MM 制造商:Richco 功能描述:HEX STANDOFF M2.5 NYLON 15MM |
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