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參數(shù)資料
| 型號(hào)： | HSM123 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 18K |
| 代理商： | HSM123 |
Features
Low capacitance, proof against high voltage.
Fast recovery time.
MPAK package is suitable for high density
surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSM123
A 9
MPAK
Pin Arrangement
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
(Top View)
2
1
3
ADE-208-027C(Z)
Rev. 3
Aug. 1995
HSM123
Silicon Epitaxial Planar Diode
for High Speed Switching
Absolute Maximum Ratings
**
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Symbol
V
RM
V
R
I
FM
I
FSM
*
I
o
T
j
Tstg
Value
85
80
300
4
100
125
-55 to +125
Unit
V
V
mA
A
mA
°C
°C
Non-Repetitive peak forward surge current
Average forward current
Junction temperature
Storage temperature
* Within 1μs forward surge current.
** Per one device
Electrical Characteristics
*
(Ta = 25°C)
Item
Symbol
V
F1
V
F2
V
F3
I
R
C
trr
Min
—
—
—
—
—
—
Typ
0.70
0.79
0.85
—
1.0
—
Max
1.0
1.0
1.2
0.1
4.0
3.0
Unit
Test Condition
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
V
R
= 80 V
V
R
= 0 V, f = 1 MHz
I
F
= 10mA, V
R
=6V, R
L
=50
Forward voltage
V
Reverse current
Capacitance
μA
pF
ns
Reverse recovery time
* Per one device
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PDF描述 |
|---|---|
| HSM125WK | |
| HSM123 | Silicon Epitaxial Planar Diode for High Voltage Switching(用于高電壓開關(guān)的平面外延PIN二極管) |
| HSM124 | Silicon Epitaxial Planar Diode for Switching |
| HSM124S | Silicon Epitaxial Planar Diode for Switching |
| HSM125WK | Silicon Schottky Barrier Diode for Battery Switch(用于電池開關(guān)的肖特基勢(shì)壘二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSM123-E | 制造商:Renesas Electronics Corporation 功能描述:HSM123-E |
| HSM123TL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HSM124 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for Switching |
| HSM124S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for Switching |
| HSM124S-E | 制造商:Renesas Electronics Corporation 功能描述:HSM124S-E |
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