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參數(shù)資料
| 型號(hào)： | HSM105 |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
| 中文描述： | 技術(shù)參數(shù)表面貼裝高速整流二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 26K |
| 代理商： | HSM105 |
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Fast switching
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
HSM101
THRU
HSM106
MELF
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2001-4
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
Volts
Volts
Volts
Amps
1.0
30
15
-65 to + 175
Amps
pF
0
C
UNITS
HSM101
HSM104
HSM102
HSM105
HSM106
HSM103
50
35
50
300
210
300
100
70
100
400
280
400
600
420
600
200
140
200
12
Maximum Full Load Reverse Current Average,
Full Cycle .375” (9.5mm) lead length at
T
L
= 55
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum DC Reverse Current at Rated DC Blocking Voltage
T
A
= 25
o
C
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
100
50
Maximum Reverse Recovery Time (Note 1)
o
C
HSM101
HSM104
HSM102
HSM105
HSM106
HSM103
5.0
uAmps
1.0
1.70
75
1.3
.095 (2.4)
.106 (2.7)
.028 (.60)
.018 (.46)
.190 (4.8)
.205 (5.2)
SOLDERABLE
ENDS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSM105-W | 功能描述:整流器 1A 400V 50ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HSM106 | 制造商:PACELEADER 制造商全稱:PACELEADER INDUSTRIAL 功能描述:SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER |
| HSM106-W | 功能描述:整流器 1A 600V 70ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HSM107 | 制造商:PACELEADER 制造商全稱:PACELEADER INDUSTRIAL 功能描述:SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER |
| HSM107S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for System Protection |
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