參數(shù)資料
型號: HSDL-4260
廠商: Avago Technologies Ltd.
英文描述: High-Power T-1 (5mm) AlGaAs Infrared (875nm) Lamp
中文描述: 高功率的T 1(5mm)的AlGaAs的紅外(為875nm)燈
文件頁數(shù): 2/4頁
文件大?。?/td> 138K
代理商: HSDL-4260
2
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Reference
Operating Temperature
T
O
-40
85
°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Forward Voltage
V
F
-
1.4
1.7
1.9
2.3
V
I
FDC
=20mA
I
FDC
=100mA
Figure 2
Forward Voltage
Temperature Coefficient
V/
T
-
-1.3
-
mV/°C
I
FDC
=100mA
Figure 4
Series Resistance
R
S
-
4
-
Ohms
I
FDC
=100mA
Diode Capacitance
C
O
-
70
-
pF
V
bias
=0V,
f=1MHz
Thermal Resistance,
Junction to Ambient
R
θ
ja
-
300
-
°C/W
Optical Characteristics at 25
°
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Radiant On-Axis Intensity
I
E
150
200
-
mW/Sr
I
FDC
=100mA
Figure 5
Radiant On-Axis Intensity
Temperature Coefficient
I
E
/
T
-
-0.36
-
%/°C
I
FDC
=100mA
Viewing Angle
2
θ
1/2
λ
pk
λ
/
T
-
15
-
°
Figure 7
Peak Wavelength
-
875
-
nm
Figure 1
Peak wavelength
Temperature Coefficient
-
0.2
-
nm/°C
I
FDC
=100mA
Spectral Width
λ
45
-
nm
I
FDC
=20mA
Figure 1
Optical Rise and Fall Time
t
r
/t
f
15
-
ns
I
FDC
=500mA
Duty Ratio = 20%
Pulse Width=100ns
Absolute Maximum Ratings at 25
°
C
Parameter
Symbol
Minimum
Maximum
Unit
Reference
Peak Forward Current
I
FPK
-
500
mA
Figure 3
Duty cycle = 20%
Pulse Width = 100us
Forward Current
I
FDC
-
100
mA
[1]
Power Dissipation
P
DISS
-
230
mW
Reverse Voltage
V
R
4
-
V
I
R
=100uA
Storage Temperature
T
S
-40
100
°C
LED Junction Temperature
T
J
110
°C
Lead Soldering Temperature
260 for 5 sec
°C
Notes: Derate as shown in Figure 6.
Electrical Characteristics at 25
°
C
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