參數(shù)資料
型號(hào)： HSD2118J
廠商： HSMC CORP.
英文描述： LOW VCE(sat) TRANSISTOR (20V, 5A)
中文描述： 低Vce（sat）晶體管（20V的，5A）條
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 65K
代理商： HSD2118J
HI-SINCERITY
MICROELECTRONICS CORP.
HSD2118J
LOW V
CE(sat)
TRANSISTOR (20V, 5A)
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 1/5
HSD2118J
HSMC Product Specification
Feature
Low V
CE(sat)
, V
CE(sat)
=0.6V(Typ.)(I
C
=4A/I
B
=0.1A)
Excellent DC Current Gain Characteristic
Complements the HSB1386J
Structure
Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature..................................................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)...................................................................................................................... 1 W
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 10 W
Maximum Voltages and Currents (T
=25
°
C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 50 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 20 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 6 V
I
C
I
C
Collector Current (Pulse).................................................................................................................................. 10 A
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*hFE
fT
Cob
Min.
50
20
6
-
-
-
180
-
-
Typ.
-
-
-
-
-
0.6
-
150
30
Max.
-
-
-
0.5
0.5
1
620
-
-
Unit
V
V
V
uA
uA
V
Test Conditions
I
C
=50uA
I
C
=1mA
I
E
=50uA
V
CB
=40V
V
EB
=5V
I
C
/I
B
=4A/0.1A
V
CE
=2V, I
C
=0.5A
V
CE
=6V, I
E
=-50mA, f=100MHz
V
CE
=20V, I
E
=0A, f=1MHz
MHz
pF
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification of hFE
Rank
Range
R
E
180-390
370-620
TO-252
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