參數(shù)資料
型號(hào): HSCH-9301
英文描述: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes(砷化鎵粱式引線肖特基勢(shì)壘環(huán)二極管和橋二極管)
中文描述: 砷化鎵梁式引線肖特基二極管環(huán)和橋(砷化鎵粱式引線肖特基勢(shì)壘環(huán)二極管和橋二極管)
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 41K
代理商: HSCH-9301
3
Typical Parameters
SPICE Parameters
Parameter
Units
HSCH-9XXX
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
5
pF
eV
A
A
0.04
1.43
10E -5
1.6 x 10E -13
1.20
5
0.7
2
0.5
V
100
10
1
0.1
0.01
FORWARD VOLTAGE (V)
0
0.2
0.4
0.6
1.2
1.0
0.8
+125
°
C
+25
°
C
-55
°
C
Figure 1. Typical Forward
Characteristics for HSCH-9301, HSCH-
9351.
Dynamic and Series
Resistance
Schottky diode resistance may be
expressed as series resistance, R
S
,
or as dynamic resistance, R
D
.
These two terms are related by
the equation
R
D
= R
S
+ R
j
where R
j
is the resistance of the
junction. Junction resistance of a
diode with DC bias is quite
accurately calculated by
R
j
= 26/I
B
where I
B
is the bias current in
milliamperes. The series
resistance is independent of
current.
The dynamic resistance is more
easily measured. If series
resistance is specified it is usually
obtained by subtracting the
calculated junction resistance
from the measured dynamic
resistance.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “C
M
,” and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in
Figure 2. The diagonal
capacitance is calculated using
the following formula
C
x C
C
x C
4
C
= ––––––– + –––––––
C
1
+ C
2
C
3
+ C
4
The equivalent capacitance is the
capacitance between points A and
C in Figure 2. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ –––––––––––
1
C
2
C
3
C
4
1
C
1
C
2
C
4
C
3
A
B
C
Figure 2.
相關(guān)PDF資料
PDF描述
HSCH-9351 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes(砷化鎵粱式引線肖特基勢(shì)壘環(huán)二極管和橋二極管)
HSCH-9401 GaAs Schottky Diode(砷化鎵肖特基二極管)
HSCH-9501 GaAs Schottky Diode Series Pair Tee(砷化鎵肖特基二極管系列偶)
HSCH-9551 GaAs Schottky Diode Antiparallel Pair(砷化鎵肖特基反并聯(lián)二極管偶)
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