參數(shù)資料
型號: HSCH-9101
英文描述: GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢壘二極管)
中文描述: 砷化鎵梁式引線肖特基二極管(砷化鎵粱式引線肖特基勢壘二極管)
文件頁數(shù): 1/4頁
文件大小: 38K
代理商: HSCH-9101
GaAs Beam Lead Schottky
Barrier Diodes
Technical Data
Features
Gold Tri-Metal System
For Improved Reliability
Low Capacitance
Low Series Resistance
High Cutoff Frequency
Polyimide Passivation
Multiple Configurations
Description
The HSCH-9101 single, the
HSCH-9201 series pair, and the
HSCH-9251 anti-parallel pair are
advanced gallium arsenide
Schottky barrier diodes. These
devices are fabricated utilizing
molecular beam epitaxy (MBE)
manufacturing techniques and
feature rugged construction and
consistent electrical performance.
A polyimide coating provides
scratch protection and resistance
to contamination.
HSCH-9101
HSCH-9201
HSCH-9251
HSCH-9101
280 (11.0)
200 (7.8)
9 (0.4)
7 (0.3)
125 (4.9)
115 (4.5)
270 (10.6)
190 (7.5)
636 (25.0)
626 (24.6)
L = 0.1 nH
183 (7.2)
178 (7.0)
60 (2.4)
50 (2.0)
HSCH-9201
280 (11.0)
200 (7.8)
9 (0.4)
7 (0.3)
115 (4.5)
105 (4.1)
346 (13.6)
266 (10.5)
712 (28.0)
702 (27.6)
L = 0.1 nH
183 (7.2)
178 (7.0)
60 (2.4)
50 (2.0)
HSCH-9251
J unction Side Up
290
±
50 (11.0)
200 (7.8)
9 (0.4)
7 (0.3)
125 (4.9)
115 (4.5)
280
±
50 (10.6)
190 (7.5)
712 (28.0)
702 (27.6)
L = 0.1 nH
DIMENSIONS IN
μ
m (1/1000 inch)
183 (7.2)
178 (7.0)
60 (2.4)
50 (2.0)
相關PDF資料
PDF描述
HSCH-9251 GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢壘二極管)
HSCH-9301 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes(砷化鎵粱式引線肖特基勢壘環(huán)二極管和橋二極管)
HSCH-9351 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes(砷化鎵粱式引線肖特基勢壘環(huán)二極管和橋二極管)
HSCH-9401 GaAs Schottky Diode(砷化鎵肖特基二極管)
HSCH-9501 GaAs Schottky Diode Series Pair Tee(砷化鎵肖特基二極管系列偶)
相關代理商/技術參數(shù)
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