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參數(shù)資料
| 型號(hào)： | HSB88AS |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for High Speed Switching |
| 中文描述： | 硅肖特基二極管高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 31K |
| 代理商： | HSB88AS |
HSB88AS
Rev.0, Aug. 2000, page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
O
*
Tj
10
V
Average rectified current
15
mA
Junction temperature
125
55 to +125
°
C
°
C
Storage temperature
Note:
Per one device.
Tstg
Electrical Characteristics
*
1
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
V
F2
I
R1
I
R2
C
0.350
0.500
30
0.420 V
I
F
= 1 mA
I
F
= 10 mA
V
R
= 2 V
V
R
= 10 V
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA
C = 200 pF, R = 0
, Both forward and
reverse direction 1 pulse.
0.580
Reverse current
0.2
μ
A
10
Capacitance
0.80
pF
Capacitance deviation
C
V
F
0.10
pF
Forward voltage deviation
10
mV
ESD-Capabilityme *
2
V
Notes
:
1. Per one device.
2. Failure criterion ; I
R
>
0.4
μ
A at V
R
= 2V
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