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參數(shù)資料
| 型號： | HSB276AS |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for Balanced Mixer |
| 中文描述： | 硅肖特基二極管平衡混頻器 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 23K |
| 代理商： | HSB276AS |
HSB276AS
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
5
V
Reverse voltage
V
R
I
O
Tj
3
V
Average rectified current
*1
30
mA
Junction temperature
125
°
C
°
C
Storage temperature
Note
1. Per one device
Tstg
-55 to +125
Electrical Characteristics (Ta = 25
°
C)
*2
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
V
R
I
R
I
F
C
3
—
—
V
I
R
= 1 mA
V
R
= 0.5V
V
F
= 0.5V
V
R
= 0.5V, f = 1 MHz
V
R
= 0.5V, f = 1 MHz
C = 200pF , R = 0
Both forward and reverse direction 1 pulse.
Reverse current
—
—
50
μ
A
Forward current
35
—
—
mA
Capacitance
—
—
0.90
pF
Capacitance deviation
C
—
—
0.10
pF
ESD-Capability
*1
—
30
—
—
V
Note
Note
1. Failure criterion ; I
R
≥
100
μ
A at V
R
=0.5 V
2. Per one device
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相關(guān)代理商/技術(shù)參數(shù) |
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