- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370686 > HSB226S PDF資料下載
參數(shù)資料
| 型號(hào)： | HSB226S |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 28K |
| 代理商： | HSB226S |
HSB226S
Rev.0, Jul. 2000, page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
25
V
Non-Repetitive peak
forward surge current
I
FSM
*
1
*
2
200
mA
forward current
I
F
*
Tj
2
50
mA
°
C
°
C
Junction temperature
125
55 to +125
Storage temperature
Notes: 1. 10msec sine wave 1 pulse
2. Two device total
Tstg
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
V
F2
I
R
C
—
—
0.33
V
I
F
= 1 mA
I
F
= 5 mA
V
R
= 20 V
V
R
= 1 V, f = 1 MHz
—
—
0.38
V
μ
A
pF
Reverse current
—
—
0.45
Capacitance
Note:
—
—
2.80
Per one device
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSB226WK | |
| HSB226YP | Silicon Schottky Barrier Diode |
| HSB276AS | Silicon Schottky Barrier Diode for Balanced Mixer |
| HSB276S | Silicon Schottky Barrier Diode for Balanced Mixer(用于平衡混頻器的肖特基勢(shì)壘二極管) |
| HSB278S | Silicon Schottky Barrier Diode for High Speed Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSB226STL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HSB226STR-E | 制造商:Renesas Electronics Corporation 功能描述:DIODE 制造商:Renesas Electronics Corporation 功能描述:DIODE - Tape and Reel |
| HSB226WK | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| HSB226WKTL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HSB226YP | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。