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參數(shù)資料
| 型號(hào)： | HSA1300D |
| 廠商： | HSMC CORP. |
| 英文描述： | SILICON PNP EPITAXIAL TYPE |
| 中文描述： | 硅外延式進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | HSA1300D |
HI-SINCERITY
MICROELECTRONICS CORP.
HSA1300D
SILICON PNP EPITAXIAL TYPE
Spec. No. : HD200202
Issued Date : 1999.07.01
Revised Date : 2002.02.20
Page No. : 1/3
HSA1300D
HSMC Product Specification
Description
Strobo Flash Applications
Medium Power Amplifier Applications
Features
High DC Current Gain and Excellenr hFE Linearity
hFE(1)=140-600, (VCE=-1V, IC=-0.5A)
hFE(2)=60 (Min.), 120(Typ.), (VCE=-1V, IC=-4A)
Low Saturation Voltage.
VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50mA)
Absolute Maximum Ratings
(Ta=25
°
C)
Characteristic
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Ratios
-20
-20
-10
-6
-2
-5
-2
1.5
150
-55~150
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
DC
Pulsed
(Note1)
Collector Current
A
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width=10ms(Max.), Duty Cycle=30%(Max.)
A
W
°
C
°
C
Electrical Characteristics
(Ta=25
°
C)
Symbol
V(BR)CEO
V(BR)EBO
ICBO
IEBO
*hFE(1) (Note 2)
*hFE(2)
*VCE(sat)
VBE
fT
Cob
Min.
-10
-6
-
-
140
60
-
-
-
-
Typ.
-
-
-
-
-
120
-0.20
-0.83
140
50
Max.
-
-
-100
-100
600
-
-0.50
-1.5
-
-
Unit
V
V
nA
nA
Test Condition
IC=10mA, IB=0
IE=-1mA, IC=0
VCE=-20V, IE=0
VBE=-6V, IC=0
VCE=-1V, IC=0.5A
VCE=-1V, IC=-4A
IC=-2A, IB=-50mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-0.5A
VCE=-10V, IE=0, f=1KHZ
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
V
V
MHz
pF
Classifications of hFE
Rank
hFE(1)
Y
GR
EL
140-280
200-400
300-600
TO-126ML
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