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參數(shù)資料
| 型號(hào)： | HS9-82C54RH-Q |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | XO, clock |
| 英文描述： | Radiation Hardened CMOS Programmable Interval Timer |
| 中文描述： | 3 TIMER(S), PROGRAMMABLE TIMER, CDFP24 |
| 文件頁(yè)數(shù)： | 9/21頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | HS9-82C54RH-Q |
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956
HS-82C54RH
Burn-In Circuits
STATIC CONFIGURATION FOR BOTH
FLATPACK & SBDIP PACKAGE
NOTES:
1. VDD = 6.5V
±
5%
2. T
A
= +125
o
C Minimum
3. Resistors = 10k
4. IDD < 100
μ
A
5. AC: F0 is compliment of F0
F0 is a 50% duty cycle pulse burst
F0 is left high after pulse burst
DYNAMIC CONFIGURATION FOR BOTH
FLATPACK & SBDIP PACKAGE
NOTES:
1. VDD = 6.5V
±
5%(Burn-In)
2. VDD = 6.0V
±
5%(Life Test)
3. T
A
= +125
o
C Minimum
4. IDD < 20mA
5. Resistors = 10K
,
except for loads = 2.7k
6. -0.3V
≤
VIL
≤
0.8V
7. VDD -1.0V
≤
VIH
≤
VDD +0.5V
8. AC: F0 is compliment of F0
F0 = 100kHz
±
10%, 50% Duty Cycle
F1 = F0/2, F2 = F1/2 . . . F10 = F9/2
Irradiation Circuits
HS-82C54RH
NOTES:
1. VDD = 5.5V
±
10%, T
A
= +25
o
C
2. Group E Testing is performed in Sidebrazed DIP
3. Group E Sample Size is 2 die/wafer
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7
8
9
10
11
12
16
17
18
19
20
21
22
24
15
14
13
23
VDD
OPEN
F0
OPEN
OPEN
F0
1
2
3
4
5
6
7
8
9
10
11
12
16
17
18
19
20
21
22
24
15
14
13
23
VDD
LOAD
F2
LOAD
LOAD
F9
F7
F6
F5
F4
F3
F8
F10
F11
F1
F0
F0
VDD
LOAD
2.7K
2.7K
1
2
3
4
5
6
7
8
9
10
11
12
16
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20
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22
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24
15
14
13
N/C
N/C
5.5V
N/C
5.5V
Spec Number
518059
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| HS9-82C85RH-Q | 制造商:Intersil Corporation 功能描述:CLOCK CNTRLR/GENERATOR 24PIN CFLATPACK - Bulk |
| HS9-9008RH | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital Converter |
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