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| 型號(hào)： | HS9-80C86RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | 微控制器/微處理器 |
| 英文描述： | Radiation Hardened 16-Bit CMOS Microprocessor |
| 中文描述： | 16-BIT, 5 MHz, MICROPROCESSOR, CDFP42 |
| 封裝： | METAL SEALED, CERAMIC, DFP-42 |
| 文件頁(yè)數(shù)： | 10/37頁(yè) |
| 文件大?。?/td> | 239K |
| 代理商： | HS9-80C86RH-Q |
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865
Spec Number
518055
Specifications HS-80C86RH
Status Inactive Delay
(Note 4)
TCLSH
VDD = 4.75V
9, 10, 11
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
-35
o
C, +25
o
C,
+125
o
C
10
130
ns
Address Valid Delay
TCLAV
VDD = 4.75V
9, 10, 11
10
110
ns
RD Active Delay
TCLRL
VDD = 4.75V
9, 10, 11
10
165
ns
RD Inactive Delay
TCLRH
VDD = 4.75V
9, 10, 11
10
150
ns
RD Inactive to Next
Address Active
TRHAV
VDD = 4.75V
9, 10, 11
TCLCL -
45
-
ns
GT Active Delay
TCLGL
VDD = 4.75V
9, 10, 11
0
85
ns
GT Inactive Delay
TCLGH
VDD = 4.75V
9, 10, 11
0
85
ns
RD Width
TRLRH
VDD = 4.75V
9, 10, 11
2TCLCL -
75
-
ns
Output Rise Time
TOLOH
VDD = 4.75V
From 0.8V to 2.0V
9, 10, 11
-
20
ns
Output Fall Time
TOHOL
VDD = 4.75V
From 2.0V to 0.8V
9, 10, 11
-
20
ns
NOTES:
1. Setup requirement for asynchronous signal only to guarantee recognition at next CLK.
2. Applies only to T2 State (8ns into T3).
3. The HS-80C86RH actively pulls the RQ/GT pin to a logic one on the following clock low time.
4. Status lines return to their inactive (logic one) state after CLK goes low and READY goes high.
TABLE 3A. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CIN
VDD = Open, f = 1MHz
(Note 1)
T
A
= +25
o
C
-
15
pF
Output Capacitance
COUT
VDD = Open, f = 1MHz
(Note 1)
T
A
= +25
o
C
-
15
pF
I/O Capacitance
CI/O
VDD = Open, f = 1MHz
(Note 1)
T
A
= +25
o
C
-
20
pF
TIMING REQUIREMENTS
CLK Rise Time
TCH1CH2
VDD = 4.75V and 5.25V
Min and Max Mode
from 1.0V to 3.5V
-35
o
C < T
A
< +125
o
C
-
15
ns
CLK Fall Time
TCL2CL1
VDD = 4.75V and 5.25V
Min and Max Mode
from 3.5V to 1.0V
-35
o
C < T
A
< +125
o
C
-
15
ns
Input Rise Time
TILIH
VDD = 4.75V and 5.25V
Min and Max Mode
from 0.8V to 2.0V
-35
o
C < T
A
< +125
o
C
-
25
ns
Input Fall Time
TIHIL
VDD = 4.75V and 5.25V
Min and Max Mode
from 2.0V to 0.8V
-35
o
C < T
A
< +125
o
C
-
25
ns
TABLE 2B. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (MAX MODE) (Continued)
ACs tested at worst case VDD, ACs guaranteed over full operating specifications.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
相關(guān)PDF資料 |
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| HS9-80C86RH | Radiation Hardened 16-Bit CMOS Microprocessor |
| HS1-81C55RH | Radiation Hardened 256 x 8 CMOS RAM |
| HS1-81C56RH | Radiation Hardened 256 x 8 CMOS RAM |
| HS-81C55RH | Radiation Hardened 256 x 8 CMOS RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HS9812R-PPM | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:PPM MULTIPLEX RECEIVER/DECODER |
| HS9-81C55RH | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
| HS9-81C55RH-8 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
| HS9-81C55RH-Q | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
| HS9-81C56RH | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
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