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參數(shù)資料
| 型號： | HS9-65647RH |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| 中文描述： | 8K X 8 STANDARD SRAM, 50 ns, CDFP28 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HS9-65647RH |
828
Specifications HS-65647RH
Write Enable High to Out-
put ON
TWHQX
VDD = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
0
-
ns
Chip Enable to Output ON
TE1LQX
TE2HQX
VDD = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
0
-
ns
Output Enable to Output
ON
TGLQX
VDD = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
0
-
ns
Chip Enable to Output in
High Z
TE1HQZ
TE2LQZ
VDD = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
-
15
ns
Output Disable to Output in
High Z
TGHQZ
VDD = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
-
15
ns
Output Hold from Address
Change
TAXQX
VDD = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
0
-
ns
NOTES:
1. The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
2. Applies to DIP device types only.
3. Applies to Flatpack device types only.
4. All measurements referenced to device GND.
TABLE 4. POST 300K RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Standby Supply Current
IDDSB
VDD = 5.5V, IO = 0mA, E1 = VDD,
E2 = 0V, VI = VDD or GND
+25
o
C
-
10
mA
Enabled Supply Current
IDDEN
VDD = 5.5V, IO = 0mA, E1 = 0.0V,
E2 = VDD, VI = VDD or GND
+25
o
C
-
82
mA
Operating Supply Current
(Note 2)
IDDOP
VDD = 5.5V, IO = 0mA, f = 2MHz,
E = 0V,VI = VDD or GND
+25
o
C
-
100
mA
Data Retention Supply Current
IDDDR
VDD = 2.0V, IO = 0mA, E = VDD
+25
o
C
-
6
mA
NOTES:
1. DC parameters not listed in this table are tested at the +25
o
C pre-irradiation test limits. All AC parameters are tested at the +25
o
C pre-
irradiation test limits.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
518729
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HS9A-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS1-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS1-82C52RH-8 | UART |
| HS1-82C59ARH-8 | Plug; HRS No: 222-3893-8 50 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS9-65647RH/PROTO | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS-965647RH-8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9-65647RH-8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9-65647RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9-6617RH | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 2K x 8 CMOS PROM |
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