參數(shù)資料
型號(hào)： HS9-390RH-T
廠商： INTERSIL CORP
元件分類(lèi)： 運(yùn)動(dòng)控制電子
英文描述： Radiation Hardened CMOS Dual SPDT Analog Switch
中文描述： DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDFP14
封裝： CERAMIC, DFP-14
文件頁(yè)數(shù)： 7/16頁(yè)
文件大?。?/td> 104K
代理商： HS9-390RH-T
7
Specifications HS-3XXRH/883S
TABLE 3. HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1)
Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V
HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Switch Input Capacitance
CIS(OFF)
Measured Source to GND
+25
o
C
-
28
pF
Driver Input Capacitance
CC1
VA = 0V
+25
o
C
-
10
pF
CC2
VA = 15V
+25
o
C
-
10
pF
Switch Output
COS
Measured Drain to GND
+25
o
C
-
28
pF
Off Isolation
VISO
VGEN = 1Vp-p, f = 1MHz
+25
o
C
40
-
dB
Crosstalk
VCR
VGEN = 1Vp-p, f = 1MHz
+25
o
C
40
-
dB
Charge Transfer
VCTE
VS = GND, CL = 0.01
μ
F
+25
o
C
-
15
mV
NOTE:1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These
parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by
characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.
TABLE 4. HS-302RH/303RH/384RH/390RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS
Tested Per Mil-Std-883. Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
“Switch On” Resistance
+RDS
VD = 10V, IS = -10mA, S1/S2/S3/S4
+25
o
C
-
60
-RDS
VD = -10V, IS = 10mA, S1/S2/S3/S4
+25
o
C
-
60
Leakage Current Into the
Source Terminal of an “Off”
Switch
+IS(OFF)
VS = +14V, VD = -14V, S1/S2/S3/S4
+25
o
C
-100
100
nA
-IS(OFF)
VS = -14V, VD = +14V, S1/S2/S3/S4
+25
o
C
-100
100
nA
LeakageCurrentintotheDrain
Terminal of an “Off” Switch
+ID(OFF)
VS = -14V, VD = +14V, S1/S2/S3/S4
+25
o
C
-100
100
nA
-ID(OFF)
VS = +14V, VD = -14V, S1/S2/S3/S4
+25
o
C
-100
100
nA
Leakage Current from an “On”
Driver Into the Switch (Drain &
Source)
-ID(ON)
VS = VD = +14V, S1/S2/S3/S4
+25
o
C
-100
100
nA
-ID(ON)
VS = VD = -14V, S1/S2/S3/S4
+25
o
C
-100
100
nA
Positive Supply Current
I(+)
All Channels VA = 0.8V
+25
o
C
-
100
μ
A
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25
o
C
-
1
mA
Negative Supply Current
I(-)
All Channels VA = 0.8V
+25
o
C
-100
-
μ
A
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25
o
C
-100
-
μ
A
High Level Address Current
IAH
All Channels High
+25
o
C
-1
+1
μ
A
Low Level Address Current
IAL
All Channels Low
+25
o
C
-1
+1
μ
A
Break-Before-Make Time
Delay (HS-303RH/883S and
HS390RH/883S Only)
TOPEN
RL = 300
, VS = +3V, (Note 1)
+25
o
C
2
300
ns
Switch Turn-On Time
TON
RL = 300
, VS = +3V, (Note 2)
+25
o
C
-
500
ns
Switch Turn-Off Time
TOFF
RL = 300
, VS = +3V, (Note 2)
+25
o
C
-
450
ns
NOTES:
1. VAL = 0V; VAH = 5.0V
2. VAL = 0V; VAH = 4.0
Spec Number
518526
相關(guān)PDF資料
PDF描述
HS1-302RH Radiation Hardened CMOS Analog Switches
HS1-302RH-T Radiation Hardened CMOS Dual DPST Analog Switch
HS1-306RH Radiation Hardened CMOS Analog Switches
HS1-384RH Radiation Hardened CMOS Analog Switches
HS1-390RH Radiation Hardened CMOS Analog Switches
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