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參數(shù)資料
| 型號(hào)： | HS7B-2510RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Radiation Hardened High Slew Rate Operational Amplifier |
| 中文描述： | OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CDIP8 |
| 封裝： | SIDE BRAZED, DIP-8 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 86K |
| 代理商： | HS7B-2510RH-Q |
5
Irradiation Circuit
Burn-In Circuits
HS7-2510RH CERDIP
NOTES:
2. R1 = 1M
,
±
5%, 1/4W (Min)
3. C1 = C2 = 0.01
μ
F/Socket (Min) or 0.1
μ
F/Row (Min)
4. C3 = 0.01
μ
F/Socket (10%)
5. D1 = D2 = 1N4002 or Equivalent (Per Board)
6. |(V+) - (V-)| = 30V
HS9-2510RH CERAMIC FLATPACK
NOTES:
7. R1 = 1M
,
±
5%, 1/4W (Min)
8. C1 = C2 = 0.01
μ
F/Socket (Min) or 0.1
μ
F/Row (Min)
9. C3 = 0.01
μ
F/Socket (
±
10%)
10. D1 = D2 = 1N4002 or Equivalent (Per Board)
11. |(V+) - (V-)| = 31V
±
1V
1
2
3
4
8
7
6
5
+
C3
C1
V+
D1
R1
C2
D2
V-
1
2
3
4
5
6
7
14
13
12
11
10
9
8
R1
C3
C1
V+
D1
C2
D2
V-
HS7-2510RH
NOTES:
12. V1 =
+
15V
±
10%
13. V2 = -15V
±
10%
14. R = 1M
±
5%
15. C = 0.1
μ
F
±
10%
1
2
3
4
8
7
6
5
C
V1
R
V2
C
C
HS-2510RH
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| HS7-2600RH-Q | Radiation Hardened Wideband, High Impedance Operational Amplifier |
| HS7B-2600RH-Q | Radiation Hardened Wideband, High Impedance Operational Amplifier |
| HS-303RH883S | Radiation Hardened CMOS Analog Switches |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS7B-2520RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Uncompensated, High Slew Rate Operational Amplifier |
| HS7B-2600RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Wideband, High Impedance Operational Amplifier |
| HS7B-2620RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers |
| HS7B-2622RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers |
| HS7EZ | 制造商:Bogen Communications 功能描述:HORN SPEAKER, 7W, EASY DESIGN |
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