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參數(shù)資料
| 型號(hào)： | HS7-1212RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Radiation Hardened, Dual, High Speed Low Power, Video Closed Loop Buffer |
| 中文描述： | BUFFER AMPLIFIER, CDIP8 |
| 封裝： | CERDIP-8 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HS7-1212RH-Q |
9
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
69 mils x 92 mils x 19 mils
1750
μ
m x 2330
μ
m x 483
μ
m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
±
0.5k
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±
0.4k
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
±
0.8k
Substrate:
UHF-1X, Bonded Wafer, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up
)
:
Floating (Recommend Connection to V-)
ADDITIONAL INFORMATION:
Transistor Count:
180
Metallization Mask Layout
HS-1212RH
NC
+IN1
-IN1
V+
OUT1
NC
-IN2
OUT2
NC
NC
+IN2
NC
NC
V-
HS-1212RH
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