參數(shù)資料
型號: HS3AB
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 3.0 AMPS. High Efficient Surface Mount Rectifiers
中文描述: 3.0安培。高效表面貼裝二極管
文件頁數(shù): 2/2頁
文件大?。?/td> 199K
代理商: HS3AB
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
RATINGS AND CHARACTERISTIC CURVES (HS3AB THRU HS3MB)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
P
1
10
100
1000
0
100
300
200
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
J
0.1
0.5
1
5
2
10
20
50
100 200
500
1000
25
50
75
100
125
150
175
REVERSE VOLTAGE. (V)
HS3AB-HS3GB
HS3JB-HS3MB
0
FIG.2- TYPICAL REVERSE CHARACTERISTICS
20
40
60
80
100
120
0.1
1
10
100
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0
Tj=125 C
0
I
0
140
Version: A06
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
A
0
25
50
100
150
175
125
75
0
0.5
1.5
2.0
3.0
2.5
1.0
AMBIENT TEMPERATURE. ( C)
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
I
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100
10
1
0.1
0.01
FORWARD VOLTAGE. (V)
0
1.6
1.8
HS3GB
HS3JBHS3MB
HS3ABHS3FB
相關PDF資料
PDF描述
HS3BB 3.0 AMPS. High Efficient Surface Mount Rectifiers
HS3DB 3.0 AMPS. High Efficient Surface Mount Rectifiers
HS3FB 3.0 AMPS. High Efficient Surface Mount Rectifiers
HS3GB 3.0 AMPS. High Efficient Surface Mount Rectifiers
HS3JB 3.0 AMPS. High Efficient Surface Mount Rectifiers
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