參數(shù)資料
型號(hào): HS2B
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 2.0 AMPS. High Efficient Surface Mount Rectifiers
中文描述: 2.0安培。高效表面貼裝二極管
文件頁數(shù): 2/2頁
文件大?。?/td> 54K
代理商: HS2B
- 303 -
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
RATINGS AND CHARACTERISTIC CURVES (HS2A THRU HS2M)
FIG.2- MAXIMUM FORWARD CURRENT
DERATING CURVE
A
25
50
75
100 125 150 175
1.0
1.5
0
0.5
2.0
3.0
2.5
LEAD TEMPERATURE. ( C)
o
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
P
1
2
5
10
20
100
50
10
20
40
30
50
60
70
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
JEDEC Method
FIG.4- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
I
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.01
0.1
1
10
FORWARD VOLTAGE. (V)
HS G
HJS
H2H2
FIG.6- TYPICAL JUNCTION CAPACITANCE
J
0.1
0.5
1
5
2
10
20
50
100 200
500
1000
25
50
75
100
125
150
175
REVERSE VOLTAGE. (V)
HS2A-HS2G
HS2J-HS2M
FIG.3- TYPICAL REVERSE CHARACTERISTICS
20
40
60
80
100
120
0.1
1
10
100
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0
Tj=100 C
0
I
P.C.B.MOUNTED
0.27X0.27"(7.0X7.0mm)
COPPER PAD AREAS
0
140
0
0
0
0
相關(guān)PDF資料
PDF描述
HS2D 2.0 AMPS. High Efficient Surface Mount Rectifiers
HS2G 2.0 AMPS. High Efficient Surface Mount Rectifiers
HS2J 2.0 AMPS. High Efficient Surface Mount Rectifiers
HS2K 2.0 AMPS. High Efficient Surface Mount Rectifiers
HS2M 2.0 AMPS. High Efficient Surface Mount Rectifiers
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