參數(shù)資料
型號(hào)： HS1B-1412RH-Q
廠商： INTERSIL CORP
元件分類(lèi)： 運(yùn)動(dòng)控制電子
英文描述： Radiation Hardened, Quad, High Speed, Low Power, Video Closed Loop Buffer
中文描述： QUAD BUFFER AMPLIFIER, CDIP14
封裝： CERDIP-14
文件頁(yè)數(shù)： 11/11頁(yè)
文件大?。?/td> 174K
代理商： HS1B-1412RH-Q
11
Die Characteristics
DIE DIMENSIONS:
79 mils x 118 mils x 19 mils
(2000
μ
m x 3000
μ
m x 483
μ
m)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
±
0.5k
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±
0.4k
Type: Metal 2: AICu(2%)
Thickness: Thickness: Metal 2: 16k
±
0.8k
Substrate:
UHF-1X. Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up)
:
Floating (Recommend Connection to V-)
ADDITIONAL INFORMATION:
Transistor Count:
320
HS-1412RH
V-
+IN1
V+
OUT1
OUT4
-IN1
-IN4
+IN4
+IN3
+IN2
-IN3
-IN2
OUT3
OUT2
V-
HS-1412RH
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