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參數(shù)資料
| 型號(hào)： | HS1-2700RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Low Power, High Performance Radiation Hardened Operational Amplifier |
| 中文描述： | OP-AMP, 1 MHz BAND WIDTH, CDIP14 |
| 封裝： | CERAMIC, DIP-14 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | HS1-2700RH-Q |
6
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
70 mils x 60 mils x 20 mils
(1780
μ
m x 1530
μ
m x 1530
μ
m)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 7k
±
0.7k
Top Metallization:
Type: Aluminum
Thickness: 16k
±
2k
Substrate:
Linear Bipolar, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up)
:
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
< 2 x 10
5
A/cm
2
Metallization Mask Layout
HS-2700RH
BAL
BAL
V+
OUTPUT
V-
+IN
-IN
HS-2700RH
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| HS127BK1NF038B | 制造商:TE Connectivity 功能描述:EC8111-000 |
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| HS127RD1DS050X | 制造商:TE Connectivity 功能描述:EC8122-000 |
| HS127RD1NF038B | 制造商:TE Connectivity 功能描述:EC8123-000 |
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