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    參數(shù)資料
    型號(hào): HS-82C12RH
    廠商: Intersil Corporation
    英文描述: Radiation Hardened 8-Bit Input/Output Port
    中文描述: 輻射加固8位輸入/輸出端口
    文件頁(yè)數(shù): 8/28頁(yè)
    文件大?。?/td> 253K
    代理商: HS-82C12RH
    8
    Specifications HS-82C37ARH
    PERIPHERAL (SLAVE) MODE (Continued)
    ADR or CS Hold from IOR HIGH
    TIRHAX
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    0
    -
    ns
    Data Access from IOR
    TIRLDV
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    -
    150
    ns
    RESET to First IOW or IOR
    TRSLIRWL
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    2TCLCL
    -
    ns
    RESET Pulse Width
    TRSHRSL
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    300
    -
    IOR Width
    TIRLIRH
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    200
    -
    ns
    ADR or CS HIGH from IOW
    HIGH Hold Time
    TIWHAX
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    0
    -
    ns
    Data from IOW HIGH Hold Time
    TIWHDX
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    10
    -
    ns
    IOW Width
    TIWLIWH
    VDD = 4.5V
    +25
    o
    C, +125
    o
    C,
    -55
    o
    C
    9, 10, 11
    150
    -
    ns
    NOTES:
    1. READ refers to both IOR and MEMR, and WRITE refers to both IOW and MEMW, during memory to I/O and I/O to memory transfers
    2. AC’s Tested at Worst Case VDD But Guaranteed Over Full Operating Range
    TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
    PARAMETER
    SYMBOL
    CONDITIONS
    TEMPERATURE
    LIMITS
    UNITS
    MIN
    MAX
    Input Capacitance
    CIN
    VDD = Open, f = 1MHz,
    All measurements refer-
    enced to device ground.
    T
    A
    = +25
    o
    C
    -
    15
    pF
    Output Capacitance
    COUT
    VDD = Open, f = 1MHz,
    All measurements refer-
    enced to device ground.
    T
    A
    = +25
    o
    C
    -
    15
    pF
    I/O Capacitance
    CI/O
    VDD = Open, f = 1MHz,
    All measurements refer-
    enced to device ground.
    T
    A
    = +25
    o
    C
    -
    20
    pF
    ADR Active to Float Delay from CLK HIGH
    TCHAZ
    VDD = 4.5V and 5.5V
    -55
    o
    C < T
    A
    < +125
    o
    C
    -
    90
    ns
    READ or WRITE Float Delay from CLK
    HIGH
    TCHRWZ
    VDD = 4.5V and 5.5V
    -55
    o
    C < T
    A
    < +125
    o
    C
    -
    120
    ns
    DB Active to Float Delay from CLK HIGH
    TCHDZ
    VDD = 4.5V and 5.5V
    -55
    o
    C < T
    A
    < +125
    o
    C
    -
    170
    ns
    DB Float Delay from IOR HIGH
    TIRHDZ
    VDD = 4.5V and 5.5V
    -55
    o
    C < T
    A
    < +125
    o
    C
    10
    85
    ns
    Power Supply HIGH to RESET LOW
    Setup Time
    TPHRSL
    VDD = 4.5V and 5.5V
    -55
    o
    C < T
    A
    < +125
    o
    C
    500
    -
    ns
    NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are
    characterized upon initial design release and upon design changes which would affect these characteristics.
    TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
    VCC = +5V
    ±
    10%, GND = 0V, AC’s Tested at Worst Case VDD, Guaranteed Over Full Operating Range.
    PARAMETER
    SYMBOL
    (NOTES 1, 2)
    CONDITIONS
    TEMPERATURE
    SUBGROUP
    LIMITS
    UNITS
    MIN
    MAX
    Spec Number
    518058
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