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參數(shù)資料
| 型號(hào)： | HS-6664RH-T |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened 8K x 8 CMOS PROM(抗輻射CMOS 64K 可編程ROM) |
| 中文描述： | 輻射加固8K的× 8的CMOS胎膜早破（抗輻射的CMOS 64K的可編程光盤(pán)） |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | HS-6664RH-T |
3
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
(6883
μ
m x 7798
μ
m x 483
μ
m
±
25.4
μ
m)
271 x 307 x 19mils
±
1mil
METALLIZATION:
MI: 6k
±
1k
Si/AI/Cu
2k
±
500
TiW
M2: 10k
±
2k
Si/AI/Cu
SUBSTRATE POTENTIAL:
V
DD
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 8k
±
1k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
110, 874, (27,719 Gates)
PROCESS:
AVLSI
Metallization Mask Layout
HS-6664RH-T
(
(
(
(
(
(
(
D
(
(
(
(
(
(
V
S
V
S
V
D
A
A
A
D
D
D
G
D
D
D
D
D
E
A
V
D
HS-6664RH-T
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PDF描述 |
|---|---|
| HS1-6664RH | Radiation Hardened 8K x 8 CMOS PROM |
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| HS1-6664RH-T | Radiation Hardened 8K x 8 CMOS PROM |
| HS9-6664RH-T | Radiation Hardened 8K x 8 CMOS PROM |
| HS0-303ARH-Q | Radiation Hardened CMOS Dual SPDT Analog Switch |
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