參數資料
型號: HS-6617RH-T
廠商: Intersil Corporation
英文描述: Radiation Hardened 2K x 8 CMOS PROM(抗輻射CMOS 16K可編程ROM)
中文描述: 輻射加固2K × 8的CMOS胎膜早破(抗輻射的CMOS 16K的可編程光盤)
文件頁數: 3/3頁
文件大小: 94K
代理商: HS-6617RH-T
3
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
(4166
μ
m x 6350
μ
m x 483
μ
m
±
25.4
μ
m)
164 x 250 x 19mils
±
1mil
METALLIZATION:
Type: Silicon - Aluminum
Thickness: 13.0k
±
2k
SUBSTRATE POTENTIAL:
V
DD
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 8.0k
±
1k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
PROCESS:
SSAJIIV-RH
Metallization Mask Layout
HS-6617RH-T
A2 (6)
A1 (7)
A0 (8)
Q
Q
Q
G
Q
Q
Q
Q
Q
(20) G
(19) A10
(18) E
(
(
(
(
(
(
D
(
(
(
HS-6617RH-T
相關PDF資料
PDF描述
HS1-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS9-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-8 Radiation Hardened 2K x 8 CMOS PROM
HS9-6617RH-8 Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-Q Radiation Hardened 2K x 8 CMOS PROM
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