參數(shù)資料
型號(hào)： HS-390RH883S
廠商： Intersil Corporation
英文描述： Radiation Hardened CMOS Analog Switches
中文描述： 輻射加固CMOS模擬開關(guān)
文件頁數(shù)： 4/16頁
文件大小： 120K
代理商： HS-390RH883S
4
Specifications HS-3XXRH/883S
Absolute Maximum Ratings
Reliability Information
Supply Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . +44V
+VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V
-VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-22V
Analog Input Overvoltages:
+VS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLY +1.5V
-VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY - 1.5V
Digital Input Overvoltage:
+VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+VSUPPLY +4V
-VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY -4V
Peak Current, S or D Pulsed at 1ms, 10% Duty Cycle Max. . .40mA
Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (soldering 10s)
. . . . . . . . . . . . . . . . . . . . .≤
+300
o
C
Thermal Resistance
14 Lead SBDIP Package. . . . . . . . . . . . .
14 Lead Ceramic Flatpack Package . . . .
16 Lead SBDIP Package. . . . . . . . . . . . .
16 Lead Ceramic Flatpack Package . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
14 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . 0.48W
16 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . .0.48
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
14 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . .14.3mW/
o
C
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . .9.5mW/
o
C
16 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . .14.3mW/
o
C
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . .9.5mW/
o
C
θ
JA
θ
JC
70
o
C/W
105
o
C/W
70
o
C/W
105
o
C/W
19
o
C/W
17
o
C/W
19
o
C/W
17
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (
±
VSupply)
. . . . . . . . . . . . . . . . . . . . . ±
15V
Operating Temperature Range . . . . . . . . . . . . . . . .-55
o
C to +125
o
C
TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
“Switch On” Resistance
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
1
+25
o
C
-
50
2, 3
-55
o
C to +125
o
C
-
75
-RDS
VD = -10V, IS = 10mA,
S1/S2/S3/S4
1
+25
o
C
-
50
2, 3
-55
o
C to +125
o
C
-
75
Leakage Current Into
the Source Terminal of
an “Off” Switch
+IS(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25
o
C
-2
2
nA
2, 3
-55
o
C to +125
o
C
-100
100
nA
-IS(OFF)
VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25
o
C
-2
2
nA
2, 3
-55
o
C to +125
o
C
-100
100
nA
Leakage Current into
theDrainTerminalofan
“Off” Switch
+ID(OFF)
VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25
o
C
-2
2
nA
2, 3
-55
o
C to +125
o
C
-100
100
nA
-ID(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25
o
C
-2
2
nA
2, 3
-55
o
C to +125
o
C
-100
100
nA
Leakage Current from
an “On” Driver Into the
Switch (Drain & Source)
+ID(ON)
VS = VD = +14V,
S1/S2/S3/S4
1
+25
o
C
-2
2
nA
2, 3
-55
o
C to +125
o
C
-100
100
nA
-ID(ON)
VS = VD = -14V,
S1/S2/S3/S4
1
+25
o
C
-2
2
nA
2, 3
-55
o
C to +125
o
C
-100
100
nA
Low Level Input
Address Current
IAL
All Channels VA = 0.8V
1
+25
o
C
-1
1
μ
A
2, 3
-55
o
C to +125
o
C
-1
1
μ
A
High Level Input
Address Current
IAH
All Channels VA = 4.0V
1
+25
o
C
-1
1
μ
A
2, 3
-55
o
C to +125
o
C
-1
1
μ
A
Spec Number
518526
相關(guān)PDF資料
PDF描述
HS-390RH-T Radiation Hardened CMOS Dual SPDT Analog Switch(抗輻射CMOS雙路單刀雙擲模擬開關(guān))
HS-4423BRH Radiation Hardened Dual, Inverting Power MOSFET Drivers(抗輻射雙路、反相MOSFET驅(qū)動(dòng)器)
HS-508ARH-T Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection(8通道模擬多路轉(zhuǎn)換器（帶過壓保護(hù)）)
HS-508BRH 8 Channel CMOS Analog Multiplexer with Overvoltage Protection(8通道CMOS模擬多路轉(zhuǎn)換器)
HS-6617RH-T Radiation Hardened 2K x 8 CMOS PROM(抗輻射CMOS 16K可編程ROM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HS-390RH-T 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened CMOS Dual SPDT Analog Switch
HS3937ECN61H 制造商:Renesas Electronics Corporation 功能描述:H-SUPPORT TOOL - Bulk
HS3A 功能描述:整流器 3.0 Amp 50 Volt 150 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
HS3A R6 制造商:SKMI/Taiwan 功能描述:Diode Switching 50V 3A 2-Pin SMC T/R
HS3A_1 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:3.0 AMPS. High Efficient Surface Mount Rectifiers
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*